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Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys

Identifieur interne : 00CD06 ( Main/Repository ); précédent : 00CD05; suivant : 00CD07

Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys

Auteurs : RBID : Pascal:03-0509034

Descripteurs français

Pascal (Inist)
- Photoluminescence, Fluctuation, Champ faible, Effet champ magnétique, Densité, Séparation phase, Exciton, Facteur g, Composition chimique, Distribution concentration, Champ proche, Point quantique, Indium arséniure, Gallium arséniure, Indium nitrure, Gallium nitrure, Composé quaternaire, Etude expérimentale, InxGa1-xAs1-yNy, As Ga In N, 7867H.

English descriptors

KwdEn :
- Chemical composition, Concentration distribution, Density, Excitons, Experimental study, Fluctuations, Gallium arsenides, Gallium nitrides, Indium arsenides, Indium nitrides, Low field, Magnetic field effects, Near field, Phase separation, Photoluminescence, Quantum dots, Quaternary compounds, g-factor.

Abstract

A series of narrow emission lines (halfwidth 0.5-2 meV) corresponding to quantum-dot-like compositional fluctuations have been observed in low temperature near-field photoluminescence spectra of GaAsN and InGaAsN alloys. The estimation of the size, density, and nitrogen excess of individual compositional fluctuations (clusters) using scanning near-field magneto-spectroscopy reveals phase-separation effects in the distribution of nitrogen. We found a strong effect of In on the exciton g-factor in InGaAsN alloys.

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<author><name sortKey="Mintairov, A M" uniqKey="Mintairov A">A. M. Mintairov</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical composition</term>
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<term>Density</term>
<term>Excitons</term>
<term>Experimental study</term>
<term>Fluctuations</term>
<term>Gallium arsenides</term>
<term>Gallium nitrides</term>
<term>Indium arsenides</term>
<term>Indium nitrides</term>
<term>Low field</term>
<term>Magnetic field effects</term>
<term>Near field</term>
<term>Phase separation</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Quaternary compounds</term>
<term>g-factor</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term>
<term>Fluctuation</term>
<term>Champ faible</term>
<term>Effet champ magnétique</term>
<term>Densité</term>
<term>Séparation phase</term>
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<term>Facteur g</term>
<term>Composition chimique</term>
<term>Distribution concentration</term>
<term>Champ proche</term>
<term>Point quantique</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>Indium nitrure</term>
<term>Gallium nitrure</term>
<term>Composé quaternaire</term>
<term>Etude expérimentale</term>
<term>InxGa1-xAs1-yNy</term>
<term>As Ga In N</term>
<term>7867H</term>
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<front><div type="abstract" xml:lang="en">A series of narrow emission lines (halfwidth 0.5-2 meV) corresponding to quantum-dot-like compositional fluctuations have been observed in low temperature near-field photoluminescence spectra of GaAsN and InGaAsN alloys. The estimation of the size, density, and nitrogen excess of individual compositional fluctuations (clusters) using scanning near-field magneto-spectroscopy reveals phase-separation effects in the distribution of nitrogen. We found a strong effect of In on the exciton g-factor in InGaAsN alloys.</div>
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Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys

Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys

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